Contact resistance of InGaN/GaN light emitting diodes grown on the production model multi-wafer MOVPE reactor

Materials Research Society Symposium - Proceedings

Volumn 537, Issue , 1999, Pages

  Chuang, R W ^a   Zou, A Q ^b   Lee, H P ^c   Dong, Z J ^d   Xiong, F F ^a   Shih, R ^b   Bremser, M ^c   Juergensen, H ^d  

^a University of California at Irvine   (United States)

^b Alpha Photonics Inc   (United States)

^c AIXTRON Inc   (United States)

^d AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT LIMITING REACTORS; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; NICKEL COMPOUNDS; OHMIC CONTACTS; SAPPHIRE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; TEMPERATURE;

ANNEALING TEMPERATURE; GALLIUM NITRIDE; MULTI WAFER MOVPE REACTOR;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033338405     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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