Characterization of 193 nm chemically amplified resist during post exposure bake and post exposure delay

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 B, 1999, Pages 7094-7098

  Lee, Eun Mi ^a   Sung, Moon Gyu ^a   Lee, Young Mi ^a   Sohn, Young Soo ^a   Oh, Hye Keun ^a  

^a Hanyang University   (South Korea)

Author keywords

193nm lithography; Chemically amplified resist; Concentration of deprotected site; Lithography simulation; Post exposure bake; Post exposure delay

Indexed keywords

COMPUTER SIMULATION; NANOTECHNOLOGY; REFRACTIVE INDEX; SEMICONDUCTOR DEVICE MODELS;

CHEMICALLY AMPLIFIED RESISTS;

PHOTORESISTS;

EID: 0033337988     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.7094     Document Type: Article

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