Characterization of a chemically amplified photoresist for simulation using a modified "poor man's DRM" methodology

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3332, Issue , 1998, Pages 578-585

  Jakatdar, Nickhil ^a   Niu, Xinhui ^a   Spanos, Costas J ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Chemically Amplified Resists (CARs); Deprotection Induced Thickness Loss (DITL); Fourier Transform Infrared Spectroscopy (FTIR); Poor Man's Dissolution Rate Monitor (DRM); Shipley UV 5 photoresist; Simulated Annealing (SA)

Indexed keywords

ALGORITHMS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; REGRESSION ANALYSIS; SEMICONDUCTOR DEVICE MANUFACTURE; SIMULATED ANNEALING;

CHEMICALLY AMPLIFIED PHOTORESISTS (CAR);

PHOTORESISTS;

EID: 0032404022     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.308770     Document Type: Conference Paper

References (8)

1. Characterization and modeling of a positive chemically amplified resist
2. Characterization of a positive chemically amplified photoresist from the viewpoint of process control for the photolithography sequence
3. Calibration of chemically amplified resist models
4. Applications of photoinitiators to the design of resists for semiconductor manufacturing
5. Development of positive photoresist