Optical spectroscopy of epitaxial Ga2Se3 layers from the far infrared to the ultraviolet

Journal of Applied Physics

Volumn 79, Issue 6, 1996, Pages 3196-3199

  Morley, S ^a   Von Der Emde, M ^a   Zahn, D R T ^a   Offermann, V ^b   Ng, T L ^c   Maung, N ^c   Wright, A C ^c   Fan, G H ^c   Poole, I B ^c   Williams, J O ^c  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c GLYNDWR UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; DIELECTRIC PROPERTIES; ELECTRON TRANSITIONS; ENERGY GAP; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION EXCHANGE; LIGHT INTERFERENCE; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHONONS; REFLECTOMETERS; ULTRAVIOLET SPECTROSCOPY;

ELECTRON TRANSITION ENERGY; FABRY PEROT INTERFERENCE; GALLIUM SELENIDE; MULTIPHONON ABSORBANCES; REFLECTANCE MEASUREMENTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030103990     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361264     Document Type: Article

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