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Volumn 570, Issue , 1999, Pages 91-96

Homoepitaxial growth of si at low temperature (325 °C)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; CRYSTAL ORIENTATION; ELECTRON CYCLOTRON RESONANCE; EPITAXIAL GROWTH; INTERFACES (MATERIALS); LOW TEMPERATURE TESTING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; SURFACE STRUCTURE; THICKNESS MEASUREMENT;

EID: 0033331183     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-570-91     Document Type: Article
Times cited : (7)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.