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Volumn 570, Issue , 1999, Pages 91-96
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Homoepitaxial growth of si at low temperature (325 °C)
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL LATTICES;
CRYSTAL ORIENTATION;
ELECTRON CYCLOTRON RESONANCE;
EPITAXIAL GROWTH;
INTERFACES (MATERIALS);
LOW TEMPERATURE TESTING;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SEMICONDUCTING FILMS;
SURFACE STRUCTURE;
THICKNESS MEASUREMENT;
EPITAXIAL THICKNESSES;
HOMOEPITAXIAL GROWTH;
LATTICE STRUCTURE;
SEMICONDUCTING SILICON;
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EID: 0033331183
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-570-91 Document Type: Article |
Times cited : (7)
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References (18)
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