CEMS study of iron disilicide formation by iron ion implantation into silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 155, Issue 4, 1999, Pages 468-478

  Dobler, M ^a   Reuther, H ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; COMPOSITION; DOSIMETRY; ION IMPLANTATION; MOSSBAUER SPECTROSCOPY; SILICON; SPUTTERING; THERMAL EFFECTS;

CONVERSION ELECTRON MOESSBAUER SPECTROSCOPY; IRON DISILICIDES; PHASE FORMATION;

IRON ALLOYS;

EID: 0033329651     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00478-4     Document Type: Article

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