Investigations of ion implanted iron suicide layers after annealing and irradiation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 117, Issue 1-2, 1996, Pages 117-122

  Dobler, M ^a   Reuther, H ^a   Betzl, M ^a   Mader M ^a   Moller W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CHARACTERIZATION; DOSIMETRY; ION IMPLANTATION; IRRADIATION; MOSSBAUER SPECTROSCOPY; PHASE COMPOSITION; PHASE TRANSITIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS; X RAY DIFFRACTION;

CONVERSION ELECTRON MOSSBAUER SPECTROSCOPY; DEPTH SENSITIVITIES; IRON SILICIDE; SILICIDE FRACTIONS; SPUTTER DEPTH PROFILING;

IRON COMPOUNDS;

EID: 0030216474     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(96)00269-8     Document Type: Article

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