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Volumn 272, Issue 1-4, 1999, Pages 18-20
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Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRODES;
ELECTRON TUNNELING;
NEGATIVE RESISTANCE;
SEMICONDUCTING INDIUM COMPOUNDS;
PLANAR RESONANT TUNNELING DEVICES;
SELF-ASSEMBLED QUANTUM DOTS;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 0033328757
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-4526(99)00342-7 Document Type: Article |
Times cited : (1)
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References (14)
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