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Volumn 272, Issue 1-4, 1999, Pages 18-20

Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; ELECTRON TUNNELING; NEGATIVE RESISTANCE; SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0033328757     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00342-7     Document Type: Article
Times cited : (1)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.