Effect of interface roughness on I-V relation of AlGaAs/GaAs heterojunction field effect transistor

Superlattices and Microstructures

Volumn 23, Issue 2, 1998, Pages 417-425

  Fu, Y ^a   Mu, Yao Ming ^a,b   Willander, M ^a  

^a UNIVERSITY OF GOTHENBURG   (Sweden)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

Heterojunction field effect transition; I V relation; Interface roughness

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; FERMI LEVEL; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS;

CONDUCTION BANDEDGE; HETEROJUNCTION FIELD EFFECT TRANSISTORS (HJFET);

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0031703501     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0434     Document Type: Article

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