Characterization of SiO2/SiC samples using photoelectron spectroscopy

Materials Research Society Symposium - Proceedings

Volumn 572, Issue , 1999, Pages 39-44

  Johansson, L I ^a   Glans, P A ^a   Wahab, Q ^a   Grehk, T M ^b   Eickhoff, T H ^b   Drube, W ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b DESY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; AUGER ELECTRON SPECTROSCOPY; CARBON; ELECTRON ENERGY LEVELS; INTERFACES (MATERIALS); PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; PHOTONS; SPUTTERING; SYNCHROTRON RADIATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRON EMISSION ANGLE; GRAPHITE LIKE CARBON; HIGH PHOTON ENERGY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033323750     PISSN: 02729172     EISSN: None     Source Type: None    
DOI: 10.1557/proc-572-39     Document Type: Conference Paper

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