Characterization of vanadium-doped 4H-SiC using optical admittance spectroscopy

Materials Research Society Symposium - Proceedings

Volumn 572, Issue , 1999, Pages 253-258

  Smith, S R ^b   Evwaraye, A O ^c   Mitchel, W C ^a   Solomon, J S ^b   Goldstein, J ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF DAYTON RESEARCH INSTITUTE   (United States)

^c UNIVERSITY OF DAYTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; FERMI LEVEL; HALL EFFECT; HIGH TEMPERATURE OPERATIONS; HYDROGEN BONDS; IONIZATION; POWER ELECTRONICS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON CARBIDE; SPECTROSCOPIC ANALYSIS; VANADIUM;

IMPURITY CONCENTRATIONS; OPTICAL ADMITTANCE SPECTROSCOPY; SEMI INSULATING MATERIALS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033323423     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-572-253     Document Type: Conference Paper

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