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Volumn 35, Issue 25, 1999, Pages 2228-2229

High-frequency response limitation of high-performance InAlGaAs/InAlAs superlattice avalanche photodiodes

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; FREQUENCY RESPONSE; OPTICAL COMMUNICATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES;

EID: 0033322746     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991515     Document Type: Article
Times cited : (12)

References (11)
  • 2
    • 0002528786 scopus 로고
    • Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio
    • CAPASSO, F., TSANG, W.T., HUTCHINSON, A.L., and WILLIAMS, G.F.: 'Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio', Appl. Phys. Lett., 1982, 40, pp. 38-40
    • (1982) Appl. Phys. Lett. , vol.40 , pp. 38-40
    • Capasso, F.1    Tsang, W.T.2    Hutchinson, A.L.3    Williams, G.F.4
  • 3
    • 0026882273 scopus 로고
    • InGaAsP-InAlAs superlattice avalanche photodiode
    • KAGAWA, T., KAWAMURA, Y., and IWAMURA, H.: 'InGaAsP-InAlAs superlattice avalanche photodiode', IEEE J. Quantum Electron., 1992, 28, pp. 1419-1423
    • (1992) IEEE J. Quantum Electron. , vol.28 , pp. 1419-1423
    • Kagawa, T.1    Kawamura, Y.2    Iwamura, H.3
  • 4
    • 0027608387 scopus 로고
    • High-speed and low-dark current InAlAs-InAlGaAs quaternary well superlattice APD's with 120GHz gain-bandwidth product
    • WATANABE, I., SUGOU, S., ISHIKAWA, H., ANAN, T., MAKITA, K., TSUJI, M., and TAGUCHI, K.: 'High-speed and low-dark current InAlAs-InAlGaAs quaternary well superlattice APD's with 120GHz gain-bandwidth product', IEEE Photonics Technol. Lett., 1993, 5, pp. 675-677
    • (1993) IEEE Photonics Technol. Lett. , vol.5 , pp. 675-677
    • Watanabe, I.1    Sugou, S.2    Ishikawa, H.3    Anan, T.4    Makita, K.5    Tsuji, M.6    Taguchi, K.7
  • 5
    • 0030243195 scopus 로고    scopus 로고
    • 10-Gigabit-per-second high-sensitivity and wide-dynamic-range APD-HEMT optical receiver
    • YUN, T.Y., PARK, M.S., HAN, J.H., WATANABE, I., and MAKITA, K.: '10-Gigabit-per-second high-sensitivity and wide-dynamic-range APD-HEMT optical receiver', IEEE Photonics Technol. Lett., 1996, 8, pp. 1232-1234
    • (1996) IEEE Photonics Technol. Lett. , vol.8 , pp. 1232-1234
    • Yun, T.Y.1    Park, M.S.2    Han, J.H.3    Watanabe, I.4    Makita, K.5
  • 6
    • 3643105251 scopus 로고    scopus 로고
    • Microlens-integrated large-area InAlGaAs-InAlAs superlattice APD's for eye-safety 1.5-μm wavelength optical measurement use
    • HAYASHI, M., WATANABE, I., NAKATA, T., TSUJI, M., MAKITA, K., YAMAKATA, S., and TAGUCHI, K.: 'Microlens-integrated large-area InAlGaAs-InAlAs superlattice APD's for eye-safety 1.5-μm wavelength optical measurement use', IEEE Photonics Technol. Lett., 1998, 10, pp. 576-578
    • (1998) IEEE Photonics Technol. Lett. , vol.10 , pp. 576-578
    • Hayashi, M.1    Watanabe, I.2    Nakata, T.3    Tsuji, M.4    Makita, K.5    Yamakata, S.6    Taguchi, K.7
  • 7
    • 84922644221 scopus 로고    scopus 로고
    • Multiplication noise in uniform avalanche diodes
    • MCINTYRE, R.J.: 'Multiplication noise in uniform avalanche diodes', IEEE Trans. Electron Devices, 1996, ED-13, pp. 164-168
    • (1996) IEEE Trans. Electron Devices , vol.ED-13 , pp. 164-168
    • Mcintyre, R.J.1
  • 8
    • 0000512292 scopus 로고
    • Avalanche-photodiode frequency response
    • EMMONS, R.B.: 'Avalanche-photodiode frequency response', J. Appl. Phys., 1967, 38, pp. 3705-3714
    • (1967) J. Appl. Phys. , vol.38 , pp. 3705-3714
    • Emmons, R.B.1
  • 9
    • 0001179674 scopus 로고
    • InAlGaAs impact ionization rates in bulk, superlattice, and sawtooth band structures
    • TSUJI, M., MAKITA, K., WATANABE, I., and TAGUCHI, K.: 'InAlGaAs impact ionization rates in bulk, superlattice, and sawtooth band structures', Appl. Phys. Lett., 1994, 65, pp. 3248-3250
    • (1994) Appl. Phys. Lett. , vol.65 , pp. 3248-3250
    • Tsuji, M.1    Makita, K.2    Watanabe, I.3    Taguchi, K.4
  • 10
    • 0030168353 scopus 로고    scopus 로고
    • Dark current and breakdown analysis in InAlGaAs/InAlAs superlattice avalanche photodiodes
    • MAKITA, K., WATANABE, I., TSUJI, M., and TAGUCHI, K.: 'Dark current and breakdown analysis in InAlGaAs/InAlAs superlattice avalanche photodiodes', Jpn. J. Appl. Phys., 1996, 35, pp. 3440-3444
    • (1996) Jpn. J. Appl. Phys. , vol.35 , pp. 3440-3444
    • Makita, K.1    Watanabe, I.2    Tsuji, M.3    Taguchi, K.4
  • 11
    • 0030085688 scopus 로고    scopus 로고
    • Gain-bandwidth product analysis of InAlGaAs/InAlAs superlattice avalanche photodiode
    • WATANABE, I., TSUJI, M., MAKITA, K., and TAGUCHI, K.: 'Gain-bandwidth product analysis of InAlGaAs/InAlAs superlattice avalanche photodiode', IEEE Photonics Technol. Lett., 1996, 8, pp. 269-271
    • (1996) IEEE Photonics Technol. Lett. , vol.8 , pp. 269-271
    • Watanabe, I.1    Tsuji, M.2    Makita, K.3    Taguchi, K.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.