Characterization of 4H-SiC MOS capacitors by a fast-ramp response technique

Materials Research Society Symposium - Proceedings

Volumn 423, Issue , 1996, Pages 99-104

  Sudarshan, T S ^a   Madangarli, V P ^a   Gradinaru, G ^a   Tin, C C ^a   Hu, R ^a   Isaacs smith, T ^a  

^a UNIVERSITY OF SOUTH CAROLINA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CURRENT MEASUREMENT; MOS DEVICES; OXIDES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SILICON CARBIDE; VOLTAGE MEASUREMENT;

CURRENT RESPONSE; DEEP DEPLETION MEASUREMENTS; FAST RAMP RESPONSE TECHNIQUE;

CAPACITORS;

EID: 0030388479     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-423-99     Document Type: Conference Paper

References (5)