Low temperature formation of ultra-thin SiO2layers using direct oxidation method in a catalytic chemical vapor deposition system

Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 115-120

  Izumi, A ^a   Sohara, S ^a   Kudo, M ^a   Matsumura, H ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CATALYTIC CRACKING; CHEMICAL VAPOR DEPOSITION; DENSITY MEASUREMENT (SPECIFIC GRAVITY); ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; FILM PREPARATION; LEAKAGE CURRENTS; LOW TEMPERATURE OPERATIONS; OXIDATION; SILICA; SURFACE CLEANING;

CATALYTIC CHEMICAL VAPOR DEPOSITION; GAS DECOMPOSITION REACTION; SURFACE NITRIDATION;

ULTRATHIN FILMS;

EID: 0033317910     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-567-115     Document Type: Conference Paper

References (12)

1. H. Matsumura and H. Tachibana, Appl. Phys. Lett. 47,833 (1985).
2. H. Matsumura, Jpn. J. Appl. Phys. 37,3175 (1998).
3. A. Izumi and H. Matsumura, Appl. Phys. Lett. 71,1371 (1997).
4. A. Izumi, A. Masuda, S. Okada and H. Matsumura, Inst. Phys. Conf. Ser. No 155: Chapter 3 pp. 343-346 (1997).
5. A. Izumi, A. Masuda and H. Matsumura, Thin Solid Films (1999) to be published.
6. W. Kern and D. A. Poutincn, RCA Rev. 31, 187 (1970).
7. R. Putsch and S. I. Raider, J. Vac. Sci. Technol. 12,305 (1975).
8. N. Terada, H. Ogawa, K. Moriki, A. Teramoto, K. Makihara, M. Monta, T. Ohmi and T. Hattori, Jpn. J. Appl. Phys. 30, 3584 (1991).
9. G. Hollingerand F. i. Himpsel, Appl. Phys. Lett. 44, 93 (1984).
10. F. J. Himpsel, F. R. McFeely, A. Talev-Ibrahimi, J. A. Yarmoffand G. Hollinger, Phys. Rev. B38, 6084 (1988).
11. H.H. Yamagishi, N. Koike, K. Imai, K. Yamabe,T. Hattori, Jpn. J. Appl. Phys. 27, L1398 (1988).
12. K. Kumar, A. I. Chou, C. Kin, P. Choudhury, J. C. Lee and J. K. Lowell, Appl. Phys. Lett. 70, 384 (1997).