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Journal of Applied Physics

Volumn 71, Issue 11, 1992, Pages 5433-5444

Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions

(6) Holloway, Karen a Fryer, Peter M a Cabral Jr , Cyril a Harper, J M E a Bailey, P J a Kelleher, K H a

a IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008988230 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.350566 Document Type: Article

Times cited : (456)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.