Evaluation of radiation damaged P-in-n and N-in-n silicon microstrip detectors

IEEE Transactions on Nuclear Science

Volumn 46, Issue 6 PART 2, 1999, Pages 1957-1963

  Unno, Y ^a   Yamashita, T ^e   Terada, S ^a   Kohriki, T ^a   Moorhead, G ^b   Iwata, Y ^c   Takashima, R ^d   Ikeda, M ^c   Kitayama, E ^e   Sato, K ^c   Kondo, T ^a   Ohsugi, T ^c   Nakano, I ^e   Fukunaga, C ^f   Phillips, P W ^g   Robinson, D ^h   Johansen, L G ⁱ   Riedler, P ^j   Roe, S ^j   Stapnes, S ^k   Stugu, B ⁱ   more..

^a INSTITUTE OF PARTICLE AND NUCLEAR STUDIES   (Japan)

^b UNIVERSITY OF MELBOURNE   (Australia)

^c HIROSHIMA UNIVERSITY   (Japan)

^d KYOTO UNIVERSITY OF EDUCATION   (Japan)

^e OKAYAMA UNIVERSITY   (Japan)

^f TOKYO METROPOLITAN UNIVERSITY   (Japan)

^g STFC Rutherford Appleton Laboratory   (United Kingdom)

^h UNIVERSITY OF CAMBRIDGE   (United Kingdom)

ⁱ UNIVERSITY OF BERGEN   (Norway)

^j CERN   (Switzerland)

^k UNIVERSITY OF OSLO   (Norway)

more..

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRIC CONDUCTIVITY; IRRADIATION; MICROSTRIP DEVICES; RADIATION DAMAGE; SILICON WAFERS;

CHARGE COLLECTION; SILICON MICROSTRIP DETECTOR;

SILICON SENSORS;

EID: 0033314170     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.819262     Document Type: Article

References (17)

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