Integration of a split word line ferroelectric memory using a novel etching technology

Integrated Ferroelectrics

Volumn 27, Issue 1, 1999, Pages 279-290

  Kim, Dong Chun ^a   Nam, Hyo Jin ^a   Jo, William ^a   Lee, Heon Min ^a   Cho, Seong Moon ^a   Bu, Jong Uk ^a   Kang, Hee Bok ^b  

^a LG   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; DEPOSITION; ELECTROMAGNETIC WAVE POLARIZATION; ETCHING; FERROELECTRIC DEVICES; FERROELECTRIC MATERIALS; PLATINUM; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

CELL CAPACITORS; INTERLAYER DIELECTRIC DEPOSITION; ONE STEP PATTERNING; SPLIT WORD LINE FERROELECTRIC MEMORY;

RANDOM ACCESS STORAGE;

EID: 0033314128     PISSN: 10584587     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1080/10584589908228475     Document Type: Article

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