The effect of Al/Pt interface reaction on lead-zirconate-titanate capacitor and the optimization of via contact for double metal ferroelectric RAM

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1332-1335

  Hwang, Yoo Sang ^a   Lee, Jin Woo ^a   Lee, Sung Yung ^a   Koo, Bon Jae ^a   Jung, Dong Jin ^a   Chun, Yoon Soo ^a   Lee, Mi Hyang ^a   Shin, Dong Won ^a   Shin, Soo Ho ^a   Lee, Sang Eun ^a   Kim, Byung Hee ^a   Kang, Nam Soo ^a   Kim, Ki Nam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Diffusion barrier; FeRAM; Pt Al; PZT; Schottky barrier; Via contact

Indexed keywords

EID: 0005054096     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1332     Document Type: Article

References (5)

1. N. Tanabe, T. Matsuki, S. Saitoh, T. Takeuchi, S. Kobayashi, T. Nakajima, Y. Maejima, Y. Hayashi, K. Amanuma, T. Hase, Y. Miyasaka and T. Kunio: Symp. VLSI Tech. Dig. Tech. Pap. (1995) p. 123.
2. J. T. Evans and R. Womack: IEEE J. Solid State Circuit 23 (1988) 1171.
3. E. A. Brandes and G. B. Brok: Smithells Metals Reference Book (Butter Worth-Heinemann) p. 11-46.
4. W. Antpohler, G. W. Dietz and MKlee: 4th Int. Conf. Electric Ceramics and Application 1 (1994) p. 169.
5. R. Bruchhaus, D. Pitzer, O. Eibl, U. Scheithauer and W. Hoesler: Mater. Res. Soc. Symp. Proc. 243 (1993) 123.