P- and n-type doping of MBE grown cubic GaN/GaAs epilayers

Materials Research Society Symposium - Proceedings

Volumn 537, Issue , 1999, Pages

  As, D J ^a   Simonsmeier, T ^a   Busch, J ^a   Schottker B ^a   Lubbers, M ^a   Mimkes, J ^a   Schikora, D ^a   Lischka, K ^a   Kriegseis, W ^a   Burkhardt, W ^a   Meyer, B K ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; HALL EFFECT; MAGNESIUM; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; VAPOR PRESSURE;

GALLIUM NITRIDE; HALL EFFECT MEASUREMENT; THERMAL EFFUSIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033312117     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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