Mechanism for dicarbon defect formation in AlAs and GaAs

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 784-787

  Latham, C D ^a   Jones, R ^a   Haugk, M ^b   Frauenheim, Th ^c   Briddon, P R ^d  

^a UNIVERSITY OF EXETER   (United Kingdom)

^b CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^c UNIVERSITY OF PADERBORN   (Germany)

^d NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARBON; DEGRADATION; DIFFUSION IN SOLIDS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ALUMINUM ARSENIDE;

CRYSTAL DEFECTS;

EID: 0033310720     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00649-3     Document Type: Article

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8. R. Jones, P.R. Briddon, in: M. Stavola (Ed.), Identification of Defects in Semiconductors, Vol. 51A of Semiconductors and Semimetals, Academic Press, Boston, 1998 (Chapter 6).