Di-carbon complexes in AlAs and GaAs

Physica Status Solidi (B) Basic Research

Volumn 210, Issue 2, 1998, Pages 869-872

  Latham, C D ^a   Jones, R ^a   Wagner, J ^b   Davidson, B R ^c   Newman, R C ^c   Button, C C ^d   Briddon, P R ^e   Oberg S ^f  

^a UNIVERSITY OF EXETER   (United Kingdom)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

^d UNIVERSITY OF SHEFFIELD   (United Kingdom)

^e NEWCASTLE UNIVERSITY   (United Kingdom)

^f LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032282510     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199812)210:2<869::AID-PSSB869>3.0.CO;2-M     Document Type: Article

References (5)

1. J. WAGNER, R. C. NEWMAN, B. R. DAVIDSON, S. P. WESTWATER, T. J. BULLOUGH, T. B. JOYCE, C. D. LATHAM, R. JONES, and S. ÖBERG, Phys. Rev. Lett. 78, 74 (1997).
2. BYOUNG-HO CHEONG and K. J. CHANG, Phys. Rev. B 49, 17436 (1994).
3. R. JONES and S. ÖBERG, Mater. Sci. Forum 143/147, 253 (1994).
4. R. JONES and P. R. BRIDDON, in: Identification of Defects in Semiconductors, Ed. M. STAVOLA, Chap. 6, Vol. 51 A, in: Semiconductors and Semimetals, Academic Press, Boston 1998 (p. 287).
5. J. P. GOSS, R. JONES, S. ÖBERG, and P. R. BRIDDON, Phys. Rev. B 55, 15576 (1997).