Dielectric characteristics of MOS capacitors with rf sputtered Ta 2O5

2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings

Volumn 1, Issue , 2000, Pages 373-376

  Dimitrova, T ^a   Atanassova, E ^a   Koprinarova, J ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; INTERFACES (MATERIALS); MICROELECTRONICS; STRUCTURAL OPTIMIZATION; TANTALUM OXIDES; ANNEALING; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; PERMITTIVITY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SPUTTER DEPOSITION; TANTALUM COMPOUNDS; THIN FILMS; LOW-K DIELECTRIC; MOS CAPACITORS; SILICA; SILICON;

BREAKDOWN CHARACTERISTICS; BREAKDOWN STRENGTHS; DIELECTRIC CHARACTERISTICS; EFFECTIVE DIELECTRIC CONSTANTS; FABRICATION PROCESS; RF-SPUTTERING; BREAKDOWN FIELD; REACTIVE SPUTTERING; THIN SILICA FILM; SIO2 FILM;

SILICON; MOS CAPACITORS; HIGH-K DIELECTRIC;

EID: 0033300606     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICMEL.2000.840592     Document Type: Conference Paper

References (7)

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