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Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 66, Issue 1, 1999, Pages 7-10

Photoelastic characterization of residual strain in GaAs wafers annealed in holders of different geometry

(6) Herms, M a,c Fukuzawa, M a Yamada, M a Klober J b Zychowitz, G b Niklas, J R b

a KYOTO INSTITUTE OF TECHNOLOGY (Japan)

b TU BERGAKADEMIE FREIBERG (Germany)

c FRAUNHOFER INSTITUTE FOR NON DESTRUCTIVE TESTING (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COOLING; GRAPHITE; HEATING; PHOTOELASTICITY; POLARISCOPES; RESIDUAL STRESSES; STRAIN; STRESS CONCENTRATION; THERMAL GRADIENTS; THERMOCOUPLES;

SCANNING INFRARED POLARISCOPY (SIRP);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033285669 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(99)00111-7 Document Type: Article

Times cited : (4)

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