Birefringence induced by residual strain in optically isotropic III-V compound crystals

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2873, Issue , 1996, Pages 250-253

  Fukuzawa, M ^a   Yamada, M ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIREFRINGENCE; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; POLARIZATION; REFRACTIVE INDEX; STRAIN;

ABSOLUTE DIFFERENCE; FOUR-FOLD SYMMETRY; HIGH SENSITIVITY; HIGH SPATIAL RESOLUTION; IN-PLANE COMPONENTS; PRINCIPAL ANGLES; RESIDUAL STRAINS; TWO DIMENSIONAL DISTRIBUTION;

PRINCIPAL COMPONENT ANALYSIS;

EID: 85075947448     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.246233     Document Type: Conference Paper

References (6)

1. H. Kotake, K. Hirahara, and M. Watanabe, "Quantitative photoelastic measurement of residual stress in LEC grown GaP crystals", J. Cryst. Growth, Vol. 50, pp. 743-751, 1980.
2. M. Yamada, "High-sensitivity computer-controlled infrared polariscope", Rev. Sci. Instrum., Vol. 64, No. 7, pp. 1815-1821, 1993.
3. M. Yamada, M. Fukuzawa, N. Kimura, K. Kaminaka and M. Yokogawa, "Quantitative photoelastic characterization of residual strain and its correlation with dislocation density profile in semi-insulating LEC-grown GaAs wafers", Semiinsulating III-V Materials, Ixtapa, Mexico 1992, eds. C. J. Miner, W. Ford and E. R. Weber., pp. 201-210., IOP Publishing, Bristol and Philadelphia, 1993.
4. M. Yamada, "Quantitative photoelastic measurement of residual strains in undoped semi-insulating gallium arsenide", Appl. Phys. Lett. Vol. 47, No. 4, pp. 365-367, 1985.
5. M. Yamada and M. Fukuzawa, "Scanning infrared polariscope as routine tool for quantitative characterization of residual strains", 8th Conf. on Semi-Insulating III-V Materials, eds. M. Godlewski, pp. 95-98, World Scientific Publishing, Singapore, 1994.
6. M. Fukuzawa and M. Yamada, "Fine structures of residual strain distribution in Fe-doped InP- (100) wafers grown by the LEC and VCZ methods", J. Electro. Mater. Vol. 25, No. 3, pp. 337-342., 1996.