Mesoscopic homogenization of semi-insulating GaAs by two-step post growth annealing

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Volumn , Issue , 1996, Pages 63-66

  Hoffmann, B ^a   Jurisch, M ^a   Kissinger, G ^a   Koehler, A ^a   Kuehnel, G ^a   Reinhold, T ^a   Siegel, W ^a   Weinert, B ^a  

^a FREIBERGER COMPOUND MATERIALS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); DISSOLUTION; ELECTRIC PROPERTIES; ENERGY GAP; PHOTOLUMINESCENCE; PRECIPITATION (CHEMICAL); PRESSURE EFFECTS; SUPERSATURATION; THERMAL EFFECTS;

MESOSCOPIC HOMOGENIZATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030379258     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)