Interconnect failure mechanism maps for different metallization materials and processes

Materials Research Society Symposium - Proceedings

Volumn 563, Issue , 1999, Pages 59-64

  Andleigh, V K ^a   Park, Y J ^a,b   Thompson, C V ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b Korean Inst of Sci and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; FAILURE ANALYSIS; GROWTH (MATERIALS); METALLIZING; NUCLEATION; RELIABILITY;

INTERCONNECT FAILURE MECHANISM MAPS;

ELECTRIC CONTACTS;

EID: 0033283637     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-563-59     Document Type: Article

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