Imaging a GaAlAs laser diode in operation using apertureless scanning near-field optical microscopy

EPJ Applied Physics

Volumn 5, Issue 3, 1999, Pages 269-275

  Wurtz, G ^a   Bachelot, R ^a   Royer, P ^a  

^a UNIVERSITÉ DE TECHNOLOGIE DE TROYES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; HETEROJUNCTIONS; OPTICAL MICROSCOPY; SECOND HARMONIC GENERATION; SEMICONDUCTING GALLIUM ARSENIDE; SPONTANEOUS EMISSION; STIMULATED EMISSION; TUNGSTEN; VIBRATIONS (MECHANICAL);

SCANNING NEAR FIELD OPTICAL MICROSCOPY (SNOM);

SEMICONDUCTOR LASERS;

EID: 0033279586     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:1999139     Document Type: Article

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