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Volumn 216, Issue 1, 1999, Pages 269-272
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Effect of the confinement layer design on the luminescence of InGaN/GaN single quantum wells
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0033242899
PISSN: 03701972
EISSN: None
Source Type: Journal
DOI: 10.1002/(SICI)1521-3951(199911)216:1<269::AID-PSSB269>3.0.CO;2-4 Document Type: Article |
Times cited : (6)
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References (8)
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