Wafer fusion of infrared laser diodes to GaN light-emitting heterostructures

IEEE Photonics Technology Letters

Volumn 10, Issue 11, 1998, Pages 1539-1541

  Floyd, P D ^a,b   Chua, C L ^b   Treat, D W ^b   Bour, D P ^a,b  

^a IEEE   (United States)

^b PALO ALTO RESEARCH CENTER   (United States)

Author keywords

Integrated optoelectronics; Optical materials and devices; Quantum well lasers

Indexed keywords

DIFFUSION IN SOLIDS; ELECTRIC CURRENTS; HETEROJUNCTIONS; INTEGRATED OPTOELECTRONICS; INTERFACES (MATERIALS); QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

INFRARED LASER DIODES; WAFER FUSION;

QUANTUM WELL LASERS;

EID: 0032208810     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.726742     Document Type: Article

References (6)

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