Growth of boron nitride thin films on silicon substrates using new organoboron precursors

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 705-710

  Boo, J H ^a   Rohr, C ^b   Ho, W ^b  

^a Sungkyunkwan University   (South Korea)

^b Laboratory of Atomic and Solid State Physics and Sibley School of Mechanical and Aerospace Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; BORON COMPOUNDS; CRYSTALLINE MATERIALS; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; LIGHT TRANSMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; NITROGEN; SEMICONDUCTING BORON; STOICHIOMETRY;

PLASMA ASSISTED METALLORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); SUPERSONIC MOLECULAR JET EPITAXY;

SEMICONDUCTING FILMS;

EID: 0033221837     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<705::AID-PSSA705>3.0.CO;2-M     Document Type: Article

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