Effect of grain boundaries on electrical conductivity in thin GaN layers

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 683-687

  Salzman, J ^a   Uzan Saguy, C ^a   Meyler, B ^a   Kalish, R ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC POTENTIAL; GRAIN BOUNDARIES; INTERFACES (MATERIALS); ION IMPLANTATION; MATHEMATICAL MODELS; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM COMPOUNDS;

SURFACE PHOTOVOLTAGE;

SEMICONDUCTING FILMS;

EID: 0033221289     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<683::AID-PSSA683>3.0.CO;2-2     Document Type: Article

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