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1999 DOI: 10.1049/el:19991264 A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, N.A. Maleev, V.M. Ustinov, D.A. Livshits, I.S. Tarasov, D.A. Bedarev, M.V. Maximov, A.F. Tsatsul'nikov, I.P. Soshnikov, P.S. Kop'ev and Zh.I. Alferov (A.F. Ioffe Physical-Technical Institute. Politcklmicheskaya 26, 194021, St. Petersburg, Russia) N.M. Ledentsov and D. Bimberg (Institut für Festkörperphysik, Technische Universität Berlin, D-10623 Berlin, Germany)
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W CW power from sub-monolayer quantum dot diode laser A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, N.A. Maleev, V.M. Ustinov, D.A. Livshits, I.S. Tarasov, D.A. Bedarev, M.V. Maximov, A.F. Tsatsul'nikov, I.P. Soshnikov, P.S. Kop'ev, Zh.I. Alferov, N.N. Ledentsov and D. Bimberg Diode lasers emitting at 947nm with sub-monolayer deposited InAs/GaAs quantum dots in the active region have been fabricated. The 3.9W output power limited by catastrophic optical damage and the peak conversion efficiency of 50.5% were achieved at 10°C in 100μm wide stripes with uncoated facets. © IEE 1999 DOI: 10.1049/el:19991264 A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, N.A. Maleev, V.M. Ustinov, D.A. Livshits, I.S. Tarasov, D.A. Bedarev, M.V. Maximov, A.F. Tsatsul'nikov, I.P. Soshnikov, P.S. Kop'ev and Zh.I. Alferov (A.F. Ioffe Physical-Technical Institute. Politcklmicheskaya 26, 194021, St. Petersburg, Russia) N.M. Ledentsov and D. Bimberg (Institut für Festkörperphysik, Technische Universität Berlin, D-10623 Berlin, Germany)
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ZHUKOV, A.E., LIVSHITS, D.A., EGOROV, A.YU., USTINOV, V.M., MAXIMOV, M.V., MUSIKHIN, YU.G., LEDENTSOV, N.N., KOPEV, P.S., ALFEROV, ZH.I., and BiMBERG, D.: '3.5W CW Operation of A Quantum Dot Laser', Electron. Lett.
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