DC and RF performance of 0.15 μm gate length In0.70Al0.30As/In0.80Ga0.20As HFETs on GaAs substrate

Electronics Letters

Volumn 31, Issue 15, 1995, Pages 1292-1294

  Rorsman, N ^a   Karlsson, C ^a   Wang, S M ^a   Zirath, H ^a   Andersson, T G ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Field effect transistors; Semiconductor device characterisation

Indexed keywords

CHARACTERIZATION; CURRENT DENSITY; FABRICATION; GATES (TRANSISTOR); PERFORMANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; TRANSCONDUCTANCE;

HETEROSTRUCTURE FIELD EFFECT TRANSISTOR; LATTICE MISMATCH; SEMICONDUCTOR DEVICE CHARACTERIZATION;

FIELD EFFECT TRANSISTORS;

EID: 0029344016     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19950839     Document Type: Article

References (5)

1. WOJTOWICZ, M., LAI, R., STREIT, D.C., NG, G.I., BLOCK, T.R., TAN, K.L., Liu, P.H., FREUDENTHAL, A.K., and DIA, R.M.: ‘0.10μm graded InGaAs channel InP HEMT with 305 fT and 340GHz fmax’, IEEE Electron Device Lett., 1994, 15, pp. 477-479
2. WIN, P., DRUELLE, Y., LEGRY, P., LEPILLIET, S., CAPPY, A., CORDIER, Y., and FAVRE, J.: ‘Microwave performance of 0.4μm gate metamorphic In0.29Al0.71As/In0.3Ga0.7As HEMT on GaAs substrate’, Electron. Lett., 1993, 29, pp. 169-170
3. HIGUCHI, K., KUDO, M., MORI, M., and MISHIMA, T.: ‘First high performance InAlAs/InGaAs HEMTs on GaAs exceeding that on InP’. IEDM, 1994, pp. 891-894
4. INOUE, K., HARMAND, J.C., and MATSUNO, T.: ‘High-quality InxGa1-xAs/InAlAs modulation-doped heterostructures grown lattice-mismatched on GaAs substrates’, J. Cryst. Growth, 1991, 111, pp. 313-317
5. RORSMAN, N., KARLSSON, C., ZIRATH, H., WANG, S.M., and ANDERSSON, T.G.: ‘Characterization of InAlAs/InGaAs HFETs with high indium content in the channel grown on GaAs substrate’. Proc. ESSDERC, 1993, pp. 765-768