Reactions and diffusion during annealing-induced H+ generation in SOI buried oxides

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 363-366

  Vanheusden, K ^a   Fleetwood, D M ^b   Devine, R A B ^c   Warren, W L ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION IN SOLIDS; ELECTRON TRAPS; INTERFACES (MATERIALS); PROTONS; SEMICONDUCTING SILICON; SILICA; SILICON ON INSULATOR TECHNOLOGY;

BURIED OXIDE LAYERS; MOBILE PROTONS; STRAINED BONDS;

MICROELECTRONICS;

EID: 0033190241     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00406-2     Document Type: Article

References (6)

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2. K. Vanheusden et al., Appl. Phys. Lett. 73, 674 (1998) .
3. R.E. Stahlbush, R.K. Lawrence, and H.L. Hughes, IEEE Trans. Nuc. Sci. 45, 2398 (1998) .
4. S.M. Myers, G.A. Brown, A.G. Revesz, and H.L. Hughes, J. Appl. Phys 73, 2196 (1993).
5. H.C. Mogul, L. Cong, R.M. Wallace, P.J. Chen, T.A. Rost, K. Harvey, Appl. Phys. Lett. 72, 1721 (1998).
6. A.J. Auberton-Herve, T. Barge, F. Metral, M. Bruel, B. Aspar, C. Maleville, H. Moriceau, T. Poumeyrol, in Amorphous and Crystalline Insulating Thin Films, Vol. 446, (Materials Research Society, Pittsburgh, PA, 1997), p. 177.