SCOPUS 정보 검색 플랫폼

Journal De Physique. IV : JP

Volumn 9 I, Issue 8, 1999, Pages

Atomic layer doping of SiGe

(1) Tillack, B a

a IHP (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ADSORPTION; BORON; CHEMICAL VAPOR DEPOSITION; DESORPTION; DOPING (ADDITIVES); EPITAXIAL GROWTH; HYDROGEN; MONOLAYERS; PARTIAL PRESSURE; PHOSPHORUS; TEMPERATURE;

ATOMIC LAYER DOPING; DIBORANE; METHYLSILANE; PHOSPHINE; SELF LIMITING;

SILICON COMPOUNDS;

EID: 0033188003 PISSN: 11554339 EISSN: None Source Type: Conference Proceeding
DOI: 10.1051/jp4:1999836 Document Type: Article

Times cited : (1)

References (15)

1
- 0343273264
- SIA Semiconductor Industry Association, The National Technology Roadmap For Semiconductors, 1997
- (1997) SIA Semiconductor Industry Association, the National Technology Roadmap for Semiconductors

2
- 0022062138
- Nishizawa J., Abe H. and Kurabayashi T., J. Electrochem. Soc., 132 (1985) 1197
- (1985) J. Electrochem. Soc. , vol.132 , pp. 1197
- Nishizawa, J.¹ Abe, H.² Kurabayashi, T.³

3
- 0024683641
- Takahashi Y., Ishii H. and Fujinaga K., J. Electrochem. Soc., 136 (1989) 1826
- (1989) J. Electrochem. Soc. , vol.136 , pp. 1826
- Takahashi, Y.¹ Ishii, H.² Fujinaga, K.³

4
- 0001085997
- Leskelä M. and Ritala M., J. Physique IV, C5 (1995) 937
- (1995) J. Physique IV, C , vol.5 , pp. 937
- Leskelä, M.¹ Ritala, M.²

5
- 0000702297
- Murota J., Sakuraba M. and Ono S., Appl. Phys. Lett., 62 (1993) 2353
- (1993) Appl. Phys. Lett. , vol.62 , pp. 2353
- Murota, J.¹ Sakuraba, M.² Ono, S.³

6
- 0342708867
- Murota J., Sakuraba M., Watanabe T., Matsuura T and Sawada Y., J. Physique IV, C5 (1995) 1101
- (1995) J. Physique IV, C , vol.5 , pp. 1101
- Murota, J.¹ Sakuraba, M.² Watanabe, T.³ Matsuura, T.⁴ Sawada, Y.⁵

7
- 0001745588
- Matsuura T., Murota J., Sawada Y. and Ohmi T., Appl. Phys. Lett., 63 (1993) 2803
- (1993) Appl. Phys. Lett. , vol.63 , pp. 2803
- Matsuura, T.¹ Murota, J.² Sawada, Y.³ Ohmi, T.⁴

8
- 0032046535
- Tillack B., Thin Sol. Films 318 (1998) 1
- (1998) Thin Sol. Films , vol.318 , pp. 1
- Tillack, B.¹

9
- 0031069220
- Tillack B., Krüger, D., Gaworzewski, P. and Ritter, G. Thin Sol. Films 294 (1997) 15
- (1997) Thin Sol. Films , vol.294 , pp. 15
- Tillack, B.¹ Krüger, D.² Gaworzewski, P.³ Ritter, G.⁴

10
- 84955019722
- Liehr M., Greenlief C. M., Offenberg M. and Kasi S. R., J. Vac. Sci. Technol. A, 8 (1990) 2960
- (1990) J. Vac. Sci. Technol. a , vol.8 , pp. 2960
- Liehr, M.¹ Greenlief, C.M.² Offenberg, M.³ Kasi, S.R.⁴

11
- 36549097443
- Yu Ming L., Vitkavage D. J. and Meyerson B. S., J. Appl. Phys., 59 (1986) 4032
- (1986) J. Appl. Phys. , vol.59 , pp. 4032
- Yu Ming, L.¹ Vitkavage, D.J.² Meyerson, B.S.³

12
- 0030396881
- Ritter G., Tillack B. and Wolansky D., Mat. Res. Soc. Symp. Proc. 429 (1996) 379
- (1996) Mat. Res. Soc. Symp. Proc. , vol.429 , pp. 379
- Ritter, G.¹ Tillack, B.² Wolansky, D.³

13
- 0000733907
- Tillack B., Zaumseil P., Morgenstern G., Krüger P. and Ritter G., Appl. Phys. Lett. 67 (1995) 1143
- (1995) Appl. Phys. Lett. , vol.67 , pp. 1143
- Tillack, B.¹ Zaumseil, P.² Morgenstern, G.³ Krüger, P.⁴ Ritter, G.⁵

14
- 0010540430
- Tillack B., Schlote J., Ritter G., Krüger D., Morgenstern G. and Gaworzewski P., J. Physique IV, C5 (1995) 1117
- (1995) J. Physique IV, C , vol.5 , pp. 1117
- Tillack, B.¹ Schlote, J.² Ritter, G.³ Krüger, D.⁴ Morgenstern, G.⁵ Gaworzewski, P.⁶

15
- 0030648116
- Banisch R., Tillack B., Pierschel M., Pressel K., Barth R., Krüger D., and Ritter G., Mat. Res. Soc. Symp. 450 (1997) 213
- (1997) Mat. Res. Soc. Symp. , vol.450 , pp. 213
- Banisch, R.¹ Tillack, B.² Pierschel, M.³ Pressel, K.⁴ Barth, R.⁵ Krüger, D.⁶ Ritter, G.⁷

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.