Novel infrared SiGe/Si heterojunction detector with an ultrathin phosphorus barrier grown by atomic layer deposition

Materials Research Society Symposium - Proceedings

Volumn 450, Issue , 1997, Pages 213-218

  Banisch, B ^a   Tilack, B ^a   Pierschel, M ^a   Pressel, K ^a   Barth, R ^a   Krueger, D ^a   Ritter, G ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; FILM GROWTH; HETEROJUNCTIONS; INTERFACES (MATERIALS); PHOSPHORUS; PHOTOEMISSION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS;

HETEROJUNCTION INTERNAL PHOTOEMISSION (HIP) DETECTOR; LOW PRESSURE RAPID THERMAL CHEMICAL VAPOR DEPOSITION (LPRTCVD);

INFRARED DETECTORS;

EID: 0030648116     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)