Raman spectroscopy studies of the influence of substrate temperature and ion beam energy on CNx thin films deposited by nitrogen-ion-assisted pulsed laser deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 8 B, 1999, Pages 4859-4862

  Ren, Z M ^a   Lu, Y F ^a   Ho, D H K ^a   Chong, T C ^a   Cheong, B A ^a,b   Pang, S I ^a,b   Wang, J P ^a,b   Li, K ^a,c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b DATA STORAGE INSTITUTE   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

Carbon nitride; Laser ablation; Raman spectroscopy; Thin films; XPS

Indexed keywords

CARBON INORGANIC COMPOUNDS; DEPOSITION; EXCIMER LASERS; GRAPHITE; ION BEAMS; LASER ABLATION; NITRIDES; PULSED LASER APPLICATIONS; RAMAN SPECTROSCOPY; SUBSTRATES; TEMPERATURE MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

CARBON NITRIDE; ION BEAM ENERGY; KRYPTON FLUORIDE; PULSED LASER DEPOSITION; SUBSTRATE TEMPERATURE;

THIN FILMS;

EID: 0033175328     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.4859     Document Type: Article

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