Growth kinetics of chemical vapor deposition of β-SiC from (CH3)2SiCl2/Ar

Journal of the Electrochemical Society

Volumn 145, Issue 7, 1998, Pages 2516-2522

  Togo, Teruoki ^a   Kawase, Motoaki ^a   Yoshihara, Yasuhide ^a   Hashimoto, Kenji ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ARGON; CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; FILM GROWTH; REACTION KINETICS; SILANES;

DIMETHYLDICHLOROSILANE; HOTWALL QUARTZ TUBE REACTORS;

SILICON CARBIDE;

EID: 0032121556     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838671     Document Type: Article

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