Ion bombardment effects on boron nitride film synthesis by reactive sputtering with electron cyclotron resonance plasmas

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 7 B, 1999, Pages 4515-4519

  Wakatsuchi, Masayuki ^a   Takaba, Yoshiro ^a   Kanai, Kumiko ^a   Ueda, Yoshio ^a   Nishikawa, Masahiro ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; COMPRESSIVE STRESS; CRACKS; CUBIC BORON NITRIDE; DELAMINATION; DEPOSITION; ELECTRON CYCLOTRON RESONANCE; PLASMA APPLICATIONS; SEMICONDUCTING FILMS; SPUTTERING; SURFACE PHENOMENA; SYNTHESIS (CHEMICAL);

ATOM FLUX; CUBIC PHASE CONTENT; ELECTRON CYCLOTRON RESONANCE PLASMA; INTERMEDIATE LAYER; ION FLUX REGION; REACTIVE SPUTTERING; RF BIASING; SURFACE CRACKING;

ION BOMBARDMENT;

EID: 0033157769     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.4515     Document Type: Article

References (31)

1. H. Holleck: J. Vac. Sci. & Technol. A 4 (1986) 2661.
2. L. Vel, G. Demazeau and J. Etourneau: Mater. Sci. Eng. B 10 (1991) 149.
3. O. Mishima, K. Era, J. Tanaka and S. Yamaoka: Appl. Phys. Lett. 53 (1988) 962.
4. R. H. Wentorf, Jr.: J. Chem. Phys. 36 (1962) 1990.
5. R. H. Wentorf, Jr.: J. Chem. Phys. 34 (1961) 809.
6. T. Ikeda, Y. Kawate and Y. Hirai: J. Vac. Sci. & Technol. A 8 (1990) 3168.
7. D. J. Kester and R. Messier: J. Appl. Phys. 72 (1992) 504.
8. N. Tanabe and M. Iwaki: Instrum. Meth. Phys. Res. B 80/81 (1993) 1349.
9. A. K. Ballal, L. Salamanca-Riba, G. L. Doll, C. A. Taylor II and R. Clarke: J. Mater. Res. 7 (1992) 1618.
10. T. A. Friedmann, K. F. McCarty, E. J. Klaus, J. C. Barbour, W. M. Clift, H. A. Johnsen, D. L. Medlin, M. J. Mills and D. K. Ottesen: Thin Solid Films 237 (1994) 48.
11. O. Tsuda, Y. Yamada, T. Fujii and T. Yoshida: J. Vac. Sci. & Technol. A 13 (1995) 2843.
12. M. P. Johansson, I. Ivanov, L. Hultman, E. P. Münger and A. Schütze: J. Vac. Sci. & Technol. A 14 (1996) 3100.
13. A. Chahara, H. Yokoyama, T. Imura and Y. Osaka: Jpn. J. Appl. Phys. 26 (1987) L1435.
14. A. Weber, U. Bringmann, R. Nikulski and C. -P. Klages: Diamond Relat. Mater. 2 (1993) 201.
15. R. A. Levy, D. J. Resnick, R. C. Frye, A. W. Yanof, G. M. Wells and F. Cerrina: J. Vac. Sci. & Technol. B 6 (1988) 154.
16. W. A. Yarbrough: J. Vac. Sci. & Technol. A 9 (1991) 1145.
17. E. S. Greiner and J. A. Gutowski: J. Appl. Phys. 28 (1957) 1364.
18. R. Geick, C. H. Perry and G. Rupprecht: Phys. Rev. 146 (1966) 543.
19. P. J. Gielisse, S. S. Mitra, J. N. Plendl, R. D. Griffis, L. C. Mansur, R. Marshall and E. A. Pascoe: Phys. Rev. 155 (1967) 1039.
20. S. Reinke, M. Kuhr, W. Kulisch and R. Kassing: Diamond Relat. Mater. 4 (1995) 272.
21. T. A. Friedmann, P. B. Mirkarimi, D. L. Medlin, K. F. McCarty, E. J. Klaus, D. R. Boehme, H. A. Johansen, M. J. Mills, D. K. Ottesen and J. C. Barbour: J. Appl. Phys. 76 (1994) 3088.
22. D. J. Kester, K. S. Ailey, R. F. Davis and K. L. More: J. Mater. Res. 8 (1993) 1213.
23. D. R. McKenzie: J. Vac. Sci. & Technol. B 11 (1993) 1928.
24. S. Uhlmann, T. Frauenheim and U. Stephan: Phys. Rev. B 51 (1995) 4541.
25. O. Tsuda, Y. Tatebayashi, Y. Yamada-Takamura and T. Yoshida: J. Vac. Sci. & Technol. A 15 (1997) 2859.
26. S. Nishiyama, E. Takahashi, Y. Iwamoto, A. Ebe, N. Kuratani and K. Ogata: Thin Solid Films 281-282 (1996) 327.
27. Y. Setsuhara, T. Suzuki, Y. Tanaka, S. Miyake, M. Suzuki, M. Kumagai, K. Ogata, M. Kohata, K. Higeta, T. Einishi, Y. Suzuki, Y. Shimotani and Y. Motonami: Nucl. Instrum. & Methods Series B 127/128 (1997) 327.
28. S. Berg, T. Larsson, C. Nender and H. -O. Blom: J. Appl. Phys. 63 (1988) 887.
29. M. Wakatsuchi, S. Ishii, Y. Kato, M. Sunagawa and F. Tani: IEEE Proc. 11th Int. Conf. Ion Implantation Technology, Austin. 1996 (IEEE, New Jersey, 1997) p. 800.
30. B. Goranchev, K. Schimidt and K. Reichelt: Thin Solid Films 149 (1987) L77.
31. W. A. Brantley: J. Appl. Phys, 44 (1973) 534.