High efficiency S-band 30 W power GaAs FETs

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1997, Pages 1417-1420

  Takenaka, Isao ^a   Takahashi, Hidemasa ^a   Asano, Kazunori ^a   Morikawa, Junko ^a   Ishikura, Kohji ^a   Kanamori, Mikio ^a   Kuzuhara, Masaaki ^a   Tsutsui, Hiroaki ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC WAVEFORMS; ELECTRONICS PACKAGING; ELECTROOPTICAL EFFECTS; IMPEDANCE MATCHING (ELECTRIC); MESFET DEVICES; SECOND HARMONIC GENERATION; SEMICONDUCTING GALLIUM ARSENIDE; VOLTAGE MEASUREMENT;

ELECTROOPTIC SAMPLING (EOS); POWER ADDED EFFICIENCY (PAE); SECOND HARMONIC TERMINATING TECHNIQUES; VOLTAGE WAVEFORMS;

POWER AMPLIFIERS;

EID: 0030681658     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)