C-band 25 watt linear power FET

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1990, Pages 981-984

  Taniguchi, Y ^a   Hasegawa, Y ^a   Aoki, Y ^a   Fukaya, J ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE DEVICES; SEMICONDUCTING GALLIUM ARSENIDE;

C BAND; INTERMODULATION DISTORTION;

TRANSISTORS, FIELD EFFECT;

EID: 0025028504     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (1)