SCOPUS 정보 검색 플랫폼

Microelectronics Reliability

Volumn 39, Issue 6-7, 1999, Pages 1009-1014

Improved SRAM failure diagnosis for process monitoring via current signature analysis

(3) Schienle, M a Zanon, Th b Schmitt Landsiedel, D c

a INFINEON TECHNOLOGIES AG (Germany)

b CARNEGIE MELLON UNIVERSITY (United States)

c TECHNICAL UNIVERSITY OF MUNICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEFECTS; ELECTRIC CURRENT MEASUREMENT; ELECTRONIC DOCUMENT IDENTIFICATION SYSTEMS; FAILURE ANALYSIS; LOGIC CIRCUITS; MONITORING; PROCESSING;

CURRENT SIGNATURE ANALYSIS; PROCESS MONITORING;

RANDOM ACCESS STORAGE;

EID: 0033147359 PISSN: 00262714 EISSN: None Source Type: Journal
DOI: 10.1016/S0026-2714(99)00139-0 Document Type: Article

Times cited : (3)

References (7)

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- Intel Technology Journal Q2 '98
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2
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- Key attributes of an SRAM testing strategy required for effective process monitoring
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- Records of the 1993 IEEE International Workshop on Memory Testing
- Khare, J.¹ Griep, S.² Oberle, H.-D.³ Maly, W.⁴ Schmitt-Landsiedel, D.⁵ Kollmer, U.⁶ Walker, D.M.H.⁷

3
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- SRAM-based Extraction of Defect Characteristics
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- (1994) Proc. IEEE 1994 Int. Conference on Microelectronic Test Structures , vol.7 , pp. 98-107
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4
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- Improvement of SRAM-based failure analysis using calibrated IDDQ testing
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5
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- Proceedings International Test Conference 1998
- Gattiker, A.B.¹ Maly, W.²

6
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- IDDQ data analysis using current signature
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7
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.