SCOPUS 정보 검색 플랫폼

Synthetic Metals

Volumn 102, Issue 1-3, 1999, Pages 1425-1427

Sub-micron spatial resolution Raman spectroscopy and its application to stress mapping in silicon

(4) Webster, S a Smith, D A a Batchelder, D N a Karlin, S a

a UNIVERSITY OF LEEDS (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; OPTICAL RESOLVING POWER; PHASE TRANSITIONS; PROBES; RAMAN SPECTROSCOPY; RESIDUAL STRESSES; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; SURFACE STRUCTURE;

RAMAN BAND; SCANNING NEAR FIELD OPTICAL MICROSCOPY; SCRATCHING; STRESS MAPPING;

SEMICONDUCTING SILICON;

EID: 0033137737 PISSN: 03796779 EISSN: None Source Type: Journal
DOI: 10.1016/S0379-6779(98)01103-5 Document Type: Article

Times cited : (10)

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