Application of magnetic neutral loop discharge plasma to SiO2 etching process

Vacuum

Volumn 53, Issue 1-2, 1999, Pages 29-32

  Chen, W ^a   Hayashi, T ^a   Itoh, M ^a   Morikawa, Y ^a   Sugita, K ^a   Uchida, T ^a  

^a ULVAC INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON INORGANIC COMPOUNDS; DENSITY (SPECIFIC GRAVITY); ELECTRIC FIELDS; ELECTRONS; LOW TEMPERATURE EFFECTS; MAGNETIC FIELDS; PLASMA DEVICES; PLASMA ETCHING; SILICA; SILICON WAFERS; VACUUM;

ELECTRON BEAM RESIST MASK; MAGNETIC NEUTRAL LOOP DISCHARGE PLASMA; SUPER FINE TRENCH PATTERN;

MAGNETOPLASMA;

EID: 0033132920     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(98)00416-3     Document Type: Article

References (5)

1. Asakura H, Takeyama K, Yoshida Z, Uchida T. Jpn J Appl Phys 1997;36:4493.
2. Tsuboi H, Hayashi T, Uchida T. Jpn J Appl Phys 1997;36:6540.
3. Chen W, Itoh M, Hayashi T. Uchida T. Jpn J Appl Phys 1998;37:332.
4. Chen W, Itoh M, Hayashi T, Uchida T. J Vac Sci Technol 1998;A16:1594.
5. Rosenstock HM, Draxl K, Steiner BW, Herron JT. J Phys Chem Reference Data 1977;(Suppl 1). 1.