Dry etch process in magnetic neutral loop discharge plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 1, 1998, Pages 332-336

  Chen, Wei ^a   Itoh, Masahiro ^a   Hayashi, Toshio ^a   Uchida, Tajiro ^a  

^a ULVAC INC   (Japan)

Author keywords

Etch process; Inductively coupled plasma (ICP); Magnetic neutral loop discharge (NLD); Selectivity; SiO2; Uniformity

Indexed keywords

DRY ETCHING; FLUOROCARBONS; HYDROGEN; PLASMA APPLICATIONS; SILICA;

INDUCTIVELY COUPLED PLASMA (ICP); MAGNETIC NEUTRAL LOOP DISCHARGE (NLD);

MAGNETOPLASMA;

EID: 0031699441     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.37.332     Document Type: Article

References (12)

1. M. N. Hirsh and H. J. Oskam: Gaseous Electronics (Academic Press, New York, 1978).
2. K. Nojiri and E. Iguchi: J. Vac. Sci. Technol. B 13 (1995) 1451.
3. W. Chen, S. Miyake, T. Aaiyasu and B. Kyou: Jpn. J. Appl. Phys. 34 (1995) 285.
4. F. H. Bell, O. Joubert, G. S. Oehrlein, Y. Zhang and D. Vender: J. Vac. Sci. Technol. A 12 (1994) 3095.
5. J. Givens, S. Geissler, J. Lee, O. Cain, J. Marks, P. Keswick and C. Cunningham: J. Vac. Sci. Technol. B 12 (1994) 427.
6. T. Akimoto, E. Ikawa, T. Sango, K. Komachi, K. Katayama and T. Ebata: Jpn. J. Appl. Phys. 33 (1994) 7037.
7. K. Komachi: J. Vac. Sci. Technol. A 12 (1994) 769.
8. T. Uchida: Jpn. J. Appl. Phys. 33 (1994) L43.
9. H. Tsuboi, M. Itoh, T. Hayashi and T. Uchida: Jpn. J. Appl. Phys 34 (1995) 2476.
10. Z. Yoshida, H. Asakura, K. Takeyama, J. Morikawa and T. Uchida: Proc. 1996 Int. Conf. Plasma Physics, Nagoya, Japan (1996) 10-H-19.
11. Y. Hikosaka, M. Nakamura, K. Nakamura, M. Nakamura and H. Sugai: Proc. Symp. Dry Process, Tokyo (1994) p. 199.
12. Y. Chinzei, T. Ichiki, R. Kurosaki, H. Shindo and Y. Horiike: Proc. Symp. Dry Process, Tokyo (1995) p. 249.