SiO2 etching in magnetic neutral loop discharge plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1594-1599

  Chen, W ^a   Itoh, M ^a   Hayashi, T ^a   Uchida, T ^a  

^a ULVAC INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISCHARGE PLASMA; ETCH RATES; ETCHING CHARACTERISTICS; ETCHING PROCESS; HIGH ASPECT RATIO; HOLE PATTERNS; ICP PLASMAS; NLD PLASMA; PLASMA PRODUCTION; PRESSURE RANGES; WAFER ETCHING;

ASPECT RATIO; ETCHING; INDUCTIVELY COUPLED PLASMA; MAGNETIC FIELDS; SILICON COMPOUNDS; SILICON WAFERS;

ELECTRIC DISCHARGES;

EID: 0000976267     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581193     Document Type: Article

References (8)

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