Influence of damage caused by Kr ions and neutrons on electrical properties of silicon detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 426, Issue 2, 1999, Pages 477-485

  Croitoru, N ^a   Gubbini, E ^b   Rancoita, P G ^b   Rattaggi, M ^b   Seidman, A ^a  

^a TEL AVIV UNIVERSITY   (Israel)

^b INFN SEZIONE DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; HALL EFFECT; ION BOMBARDMENT; KRYPTON; NEUTRON IRRADIATION; RADIATION DAMAGE; SILICON SENSORS; THERMAL EFFECTS;

HALL EFFECT COEFFICIENT; SILICON DETECTORS;

PARTICLE DETECTORS;

EID: 0033130736     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(98)01421-1     Document Type: Article

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