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Volumn 61, Issue 3 SUPPL., 1998, Pages 464-469

Swift heavy ion radiation damage on high resistivity silicon

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EID: 0031991608     PISSN: 09205632     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0920-5632(97)00603-8     Document Type: Article
Times cited : (12)

References (15)
  • 1
    • 0030149546 scopus 로고    scopus 로고
    • Defect evolution in irradiated silicon detector material
    • 1. G. Hall B.C. MacEvoy and K. Gill. Defect evolution in irradiated silicon detector material. Nucl.Instr.Meth., A374, 1996.
    • (1996) Nucl.Instr.Meth. , vol.A374
    • Hall, G.1    MacEvoy, B.C.2    Gill, K.3
  • 7
    • 36749106352 scopus 로고
    • Oxygen-related donor states in silicon
    • 7. L.C. Kimerling and J.L. Benton. Oxygen-related donor states in silicon. Appl.Phys.Lett., 39(5), 1981.
    • (1981) Appl.Phys.Lett. , vol.39 , Issue.5
    • Kimerling, L.C.1    Benton, J.L.2
  • 9
    • 0010030093 scopus 로고
    • Generation of divacancies in silicon
    • 9. B.G. Svensson and J.L. Lindström. Generation of divacancies in silicon.... J.Appl.Phys., 72(12), 1992.
    • (1992) J.Appl.Phys. , vol.72 , Issue.12
    • Svensson, B.G.1    Lindström, J.L.2
  • 11
    • 0004278609 scopus 로고
    • Cambridge University Press, second edition
    • 11. R.A. Smith. Semiconductors. Cambridge University Press, second edition, 1978.
    • (1978) Semiconductors
    • Smith, R.A.1
  • 15


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.