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Volumn 124, Issue 4, 1997, Pages 542-548
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Study of resistivity and majority carrier concentration of silicon detectors damaged by neutron irradiation up to 1016 n/cm2
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
CRYSTAL DEFECTS;
ELECTRIC CONDUCTIVITY;
HALL EFFECT;
IRRADIATION;
NEUTRON IRRADIATION;
NEUTRONS;
SILICON;
SINGLE CRYSTALS;
HALL EFFECT MEASUREMENT;
SILICON DETECTORS;
RADIATION DETECTORS;
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EID: 0031146654
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0168-583X(97)00055-4 Document Type: Article |
Times cited : (17)
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References (23)
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