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Volumn 124, Issue 4, 1997, Pages 542-548

Study of resistivity and majority carrier concentration of silicon detectors damaged by neutron irradiation up to 1016 n/cm2

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; HALL EFFECT; IRRADIATION; NEUTRON IRRADIATION; NEUTRONS; SILICON; SINGLE CRYSTALS;

EID: 0031146654     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00055-4     Document Type: Article
Times cited : (17)

References (23)
  • 8
    • 85033104196 scopus 로고
    • eds. A. Baldial and E. Focardi SIF, Bologna
    • Z. Li, in: Italian Phys. Soc. Conf. Proc., Vol. 46, eds. A. Baldial and E. Focardi (SIF, Bologna, 1994) p. 1730.
    • (1994) Italian Phys. Soc. Conf. Proc. , vol.46 , pp. 1730
    • Li, Z.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.