Technology for nanoelectronic devices based on ultra-high vacuum scanning tunneling microscopy on the Si(100) surface

Microelectronic Engineering

Volumn 46, Issue 1, 1999, Pages 133-136

  Palasantzas, G ^a,b   Ilge, B ^a   Rogge, S ^a   Geerligs, L J ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIVERSITY OF GRONINGEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT; DEPOSITION; ELECTRIC LINES; GRANULAR MATERIALS; LITHOGRAPHY; METALLIZING; MONOLAYERS; PASSIVATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; VACUUM TECHNOLOGY;

ULTRAHIGH VACUUM SCANNING TUNNELING MICROSCOPY (UHV-STM);

NANOTECHNOLOGY;

EID: 0033130699     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00035-0     Document Type: Article

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